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| md8ic970nr1 MD8IC970GNR1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the md8ic970n wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical base station modulation formats. this device has a 2--stage design with off--chip matching for the input, interstage and output net works to cover the desired frequency sub--band. ? typical two--tone performance: v dd1 =28volts,v dd2 =25volts, i dq1(a+b) =60ma,i dq2(a+b) = 550 ma, p out = 35 watts avg. frequency g ps (db) pae (%) imd (dbc) 850 mhz 30.6 40.1 --30.5 900 mhz 31.9 42.4 --31.0 940 mhz 32.6 42.1 --31.3 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 137 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 79 watts cw features ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip prematching. on--chip stabilization. ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. document number: md8ic970n rev. 2, 5/2011 freescale semiconductor technical data 850--940 mhz, 35 w avg., 28 v rf ldmos wideband integrated power amplifiers md8ic970nr1 MD8IC970GNR1 case 1866--02 to--270 wbl--16 plastic md8ic970nr1 case 1867--02 to--270 wbl--16 gull plastic MD8IC970GNR1 figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. rf in2a gnd rf out2a / v d2a 2 3 4 5 8 9 16 10 11 12 rf out1a /v d1a gnd v g1a rf out2b / v d2b 15 7 13 (top view) 6 1 14 rf in2a rf in1a rf out2a /v d2a rf out2b /v d2b rf out1a /v d1a v g1a v g2a rf out1b /v d1b v g1b rf in1b v g2b rf in2b quiescent current temperature compensation (1) quiescent current temperature compensation (1) rf in1a v g2a v g2b rf in1b v g1b gnd gnd rf out1b /v d1b rf in2b ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 30 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit final application thermal resistance, junction to case case temperature 80 c, 35 w avg. two--tone stage 1, 28 vdc, i dq1(a+b) = 60 ma, f1 = 939.9 mhz, f2 = 940.1 mhz stage 2, 25 vdc, i dq2(a+b) = 550 ma, f1 = 939.9 mhz, f2 = 940.1 mhz r jc 2.9 0.6 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) i (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics (4) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics (4) gate threshold voltage (v ds =10vdc,i d =40 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =60madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (v dd1 =28vdc,i dq1(a+b) = 60 madc, measured in functional test) v gg(q) 9.0 10.0 11.0 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. side a and side b are tied together for this measurement. (continued) md8ic970nr1 MD8IC970GNR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics (1) zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 320 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =25vdc,i dq2(a+b) = 550 madc) v gs(q) ? 3.1 ? vdc fixture gate quiescent voltage (v dd2 =25vdc,i dq2(a+b) = 550 madc, measured in functional test) v gg(q) 7.6 8.6 9.6 vdc drain--source on--voltage (v gs =10vdc,i d =3.2adc) v ds(on) 0.1 0.48 1.2 vdc functional tests (1,2) (in freescale test fixture, 50 ohm system) v dd1 =28vdc,v dd2 =25vdc,p out =35wavg.,i dq1(a+b) =60ma, i dq2(a+b) = 550 ma, f1 = 939.9 mhz, f2 = 940.1 mhz power gain g ps 31.5 32.6 36.5 db power added efficiency pae 40.5 42.1 ? % intermodulation distortion imd ? --31.3 --29.0 db typical broadband performance (1) (in freescale test fixture, 50 ohm system) v dd1 =28vdc,v dd2 =25vdc,p out =35wavg., i dq1(a+b) =60ma,i dq2(a+b) = 550 ma frequency g ps (db) pae (%) imd (dbc) 850 mhz 30.6 40.1 --30.5 900 mhz 31.9 42.4 --31.0 940 mhz 32.6 42.1 --31.3 typical performances (1) (in freescale test fixture, 50 ohm system) v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma, i dq2(a+b) = 550 ma, 850--940 mhz bandwidth characteristic symbol min typ max unit p out @ 1 db compression point, cw p1db ? 79 ? w imd symmetry @ 71 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 22 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz quiescent current accuracy over temperature stage 1 with 8.25 k ? gate feed resistors (--30 to 85 c) (3) stage 2 ? i qt ? ? 5.03 4.61 ? ? % gain flatness in 90 mhz bandwidth @ p out =35wavg. g f ? 1.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.03 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.005 ? db/ c 1. side a and side b are tied together for this measurement. 2. part internally matched both on input and output. 3. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. 4 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 figure 3. md8ic970nr1(gnr1) test circuit component layout c1 c2 z1 r1 c3 c4 r2 l1 c7 c6 r3 l2 c8 c14 c10 c5 c9 c13 l4 l3 c12 c11 c15 c16 c18 c17 r5 r4 c20 c19 r6 r7 c36 c35 z2 r10 r9 r8 c33 c34 l6 l5 c28 c27 c29 c31 c32 c30 c23 c25 c26 c24 c21 c22 md8ic970n rev. 1 cut out area v dd1a v dd1b v gg2b v gg2a v gg1a v gg1b v dd2b v dd2a table 6. md8ic970nr1(gnr1) test circuit component designations and values part description part number manufacturer c1, c2, c35, c36 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c3, c4, c9, c10 1 f, 50 v chip capacitors grm31mr71h105ka88l murata c5, c6 3.3 pf chip capacitors atc600f3r3bt250xt atc c7, c8, c27, c28, c33, c34 39 pf chip capacitors atc600f390jt250xt atc c11, c12 47 pf chip capacitors atc600s470jt250xt atc c13, c14 4.7 pf chip capacitors atc600s4r7jt250xt atc c15, c16, c19, c20 0.1 f, 50 v chip capacitors grm188r71c104k01d murata c17, c18 5.6 pf chip capacitors atc600s5r6jt250xt atc c21, c22 15 pf chip capacitors atc600f150jt250xt atc c23, c24, c25, c26 4.7 pf chip capacitors atc600f4r7bt250xt atc c29. c30, c31, c32 2.7 pf chip capacitors atc600f2r7bt250xt atc l1, l2, l5, l6 5.0 nh 2 turn inductors a02tklc coilcraft l3, l4 2.8 nh chip inductors 0805cs--020xjlc coilcraft r1 51 ? , 1/8 w chip resistor sg73p2attd51r0f koa speer r2, r3, r8, r9 10 ? , 1/8 w chip resistors rk73h2attd10r0f koa speer r4, r5, r6, r7 8.25 k ? , 1/10 w chip resistors rk73h1jttd8251f koa speer r10 50 ? , 10 w sm chip power resistor 81a7031--50--5f florida rf labs z1, z2 900 mhz band, 90 , 3 db chip hybrid couplers gsc362--hyb0900 soshin pcb 0.030 , r =3.66 ro4350b rogers md8ic970nr1 MD8IC970GNR1 5 rf device data freescale semiconductor typical characteristics 820 g ps imd f, frequency (mhz) figure 4. two--tone broadband performance @p out = 35 watts avg. 26 36 35 34 -- 3 2 44 42 40 38 -- 2 7 -- 2 8 -- 2 9 -- 3 0 pae, power added efficiency (%) g ps , power gain (db) 33 32 31 30 29 28 27 840 860 880 900 920 940 960 980 36 -- 3 1 imd, intermodulation distortion (dbc) v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, p out =35w(avg.) 200 khz tone spacing figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u pae figure 6. power gain, power added efficiency and intermodulation distortion products versus average output power 35 p out , output power (watts) 33 31 29 20 34 32 30 10 30 40 60 0 60 50 40 30 20 10 pae, power added efficiency (%) 50 imd imd, intermodulatio n distortion (dbc) -- 6 0 0 -- 1 0 -- 2 0 -- 4 0 -- 3 0 -- 5 0 g ps , power gain (db) g ps pae v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, f1 = 939.9 mhz, f2 = 940.1 mhz v dd1 =28vdc,v dd2 =25vdc,p out = 71 w (pep) i dq1(a+b) =60ma,i dq2(a+b) = 550 ma two--tone measurements (f1 + f2)/2 = center frequency of 900 mhz 6 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 typical characteristics 1 g ps imd p out , output power (watts) avg. figure 7. power gain, power added efficiency and intermodulation distortion products versus output power -- 2 0 -- 3 0 24 36 0 60 50 40 30 20 pae, power added efficiency (%) g ps , power gain (db) 34 32 10 100 10 -- 7 0 30 28 26 -- 1 0 -- 4 0 -- 5 0 -- 6 0 figure 8. broadband frequency response 24 36 700 f, frequency (mhz) 32 30 28 750 gain (db) 34 gain 800 850 900 950 1000 1050 1100 26 pae imd, intermodulatio n distortion (dbc) 850 mhz 900 mhz 940 mhz v dd1 =28vdc,v dd2 =25vdc p in =0dbm,i dq1(a+b) =60ma i dq2(a+b) = 550 ma v dd1 =28vdc,v dd2 =25vdc,i dq1(a+b) =60ma i dq2(a+b) = 550 ma, 200 khz tone spacing 850 mhz 900 mhz 940 mhz md8ic970nr1 MD8IC970GNR1 7 rf device data freescale semiconductor v dd1 =28vdc,i dq1(a) =30ma f mhz z in ? z load ? 820 18.4 -- j13.0 11.3 + j20.0 840 18.8 -- j12.7 11.7 + j21.9 860 19.1 -- j12.9 12.1 + j23.4 880 19.1 -- j13.2 12.5 + j24.5 900 18.7 -- j13.6 12.7 + j25.1 920 18.0 -- j13.9 12.5 + j25.6 940 17.2 -- j14.2 11.8 + j26.0 960 16.1 -- j14.3 10.9 + j26.6 980 14.6 -- j14.3 9.6 + j27.4 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 330 31.2 -- j21.5 16.2 + j57.8 350 33.6 -- j18.7 24.2 + j59.6 370 35.8 -- j18.8 29.8 + j55.6 390 36.4 -- j19.6 29.0 + j52.8 410 37.0 -- j20.1 27.8 + j54.7 430 37.7 -- j21.7 30.2 + j58.5 450 36.2 -- j24.8 38.8 + j59.1 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 120 42.7 -- j27.4 47.3 + j80.0 130 40.0 -- j22.5 61.4 + j93.3 140 40.2 -- j16.0 84.0 + j104.2 150 43.8 -- j13.3 114.5 + j107.2 160 47.8 -- j10.0 147.2 + j98.5 170 51.5 -- j10.0 179.4 + j81.3 180 54.9 -- j10.6 215.9 + j53.3 190 58.2 -- j12.9 256.6 -- j7.6 200 59.6 -- j16.9 233.3 -- j109.9 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent input and load impedance ? stage 1 z in z load device under test output matching network note: measurement made on a per side basis. 8 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 v dd2 =25vdc,i dq2(a) = 275 ma, p out = 17.5 watts avg. f mhz z in ? z load ? 820 9.49 + j10.2 3.19 + j1.99 840 10.3 + j10.3 3.29 + j2.11 860 11.2 + j10.2 3.39 + j2.18 880 12.2 + j9.89 3.45 + j2.20 900 13.1 + j9.34 3.46 + j2.16 920 14.0 + j8.53 3.40 + j2.08 940 14.6 + j7.51 3.24 + j2.00 960 15.1 + j6.28 2.98 + j1.96 980 15.2 + j4.87 2.66 + j1.99 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 330 5.78 + j3.02 5.53 + j1.53 350 5.73 + j3.40 6.27 + j1.77 370 5.66 + j3.89 6.95 + j1.55 390 5.63 + j4.34 7.18 + j0.90 410 5.60 + j4.75 6.67 + j0.22 430 5.53 + j5.06 5.61 + j0.05 450 5.38 + j5.32 4.45 + j0.57 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. f mhz z in ? z load ? 120 5.47 -- j0.60 5.74 + j2.70 130 5.46 -- j0.36 6.36 + j1.97 140 5.47 -- j0.13 6.21 + j1.37 150 5.47 + j0.11 5.95 + j1.37 160 5.46 + j0.35 6.09 + j1.63 170 5.43 + j0.56 6.59 + j1.58 180 5.42 + j0.75 6.70 + j0.92 190 5.49 + j0.93 5.73 + j0.82 200 5.42 + j1.05 4.83 + j2.57 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent input and load impedance ? stage 2 z in z load device under test output matching network note: measurement made on a per side basis. md8ic970nr1 MD8IC970GNR1 9 rf device data freescale semiconductor alternative peak tune load pull characteristics ? stage 2 v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max p out p1db dbm w 850 10.9 + j10.2 3.34 + j2.16 47.1 51 940 14.6 + j7.51 3.24 + j2.00 46.8 48 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. single side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max eff. p1db % 850 10.9 + j10.2 3.36 + j3.93 66.2 940 14.6 + j7.51 2.95 + j3.66 62.1 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 12. single side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max p out p1db dbm w 430 5.53 + j5.06 5.61 + j0.05 46.8 48 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 13. single side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd2 =25vdc,i dq2 = 300 ma , cw f mhz z source ? z load (1) ? max eff. p1db % 430 5.53 + j5.06 5.96 + j2.65 66.1 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 14. single side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner 10 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 package dimensions md8ic970nr1 MD8IC970GNR1 11 rf device data freescale semiconductor 12 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 md8ic970nr1 MD8IC970GNR1 13 rf device data freescale semiconductor 14 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 md8ic970nr1 MD8IC970GNR1 15 rf device data freescale semiconductor 16 rf device data freescale semiconductor md8ic970nr1 MD8IC970GNR1 product documentation, software and tools refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 feb. 2011 ? initial release of data sheet 1 feb. 2011 ? corrected output power from 35 w cw to 35 w avg. two--tone, table 2, thermal characteristics, p. 2 2 may 2011 ? added part number MD8IC970GNR1 (to--270 wbl--16 gull), p. 1 ? added 1867--02 (to--270 wbl--16 gull) package isometric, p. 1, and mechanical outline, p. 13--15 md8ic970nr1 MD8IC970GNR1 17 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: md8ic970n rev. 2, 5/2011 |
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